Detectors for 0.19 - 2.1µm and Faraday rotators and optical isolators.
EOT offers Faraday rotators and isolators for free space and fiber lasers, designed for high average and peak power applications. EOT has the technical knowledge, experience and manufacturing facilities to satisfy high-volume and custom requirements. EOT also manufacture high speed photodetectors for monitoring the output of pulsed, mode-locked or externally modulated lasers in the range 0.19-2.1µm
EOT has years of experience designing and manufacturing Faraday rotators and isolators for demanding applications.
EOT's 70W and 100W fiber laser isolators have been specifically designed for pulsed Yb fiber lasers used in marking and engraving applications.
EOT manufactures Faraday rotators and optical isolators with apertures from 2mm to 45mm. Escape ports and waveplates are optional.
EOT manufactures low and medium power wavelength tunable Faraday rotators and isolators for the 500-1030nm region.
EOT manufactures broadband (Ti:Sapphire, centre wavelength 800nm) Faraday rotators and Faraday isolators with apertures of 5, 8 and 10mm.
EOT manufactures broadband (Ti:Sapphire, centre wavelength 800nm) Faraday rotators and Faraday isolators with apertures of 5, 8 and 10mm.
Ultrafast <30ps gallium arsenide (GaAs) photodetectors covering 450-870nm. These PIN photodiodes from EOT are available in amplified or un-amplified versions.
The ET-5000 series from EOT are amplified sub-nanosecond response indium gallium arsenide (InGaAs) photodetectors that extend the wavelength range from 1400nm to 2100nm.
EOT's ET-2030A and ET-3000A are amplified sub-nanosecond response PIN photodetectors with a responsivity from 300nm to 1700nm.
The 22GHz indium gallium arsenide (InGaAs) photodetectors from EOT contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current.
The ET5000 series from EOT are high speed indium gallium arsenide (InGaAs) detectors offering responsivity from 1475nm to 2100nm with a rise and fall time of <50ps. These detectors are ideally suited to monitoring free space or fiber thulium (Tm) and holmium (Ho) lasers.
EOT's ET-3000 series of biased indium gallium arsenide (InGaAs) photodetectors cover 900nm to 1700nm. Four versions of this PIN photodiode have rise times from 175ps to 6ns.
EOT's ET-2030A and ET-3000A are amplified sub-nanosecond response PIN photodetectors with a responsivity from 300nm to 1700nm.
EOT's ET-2000 series of biased silicon (Si) photodetectors cover 300nm to 1100nm. Four versions of this PIN photodiode have rise times down to 200ps.
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